The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Aug. 28, 2015
Applicant:

Stanley Electric Co., Ltd., Meguro-ku, Tokyo, JP;

Inventors:

Mitsuyasu Kumagai, Yokohama, JP;

Ji-Hao Liang, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 33/24 (2010.01); H01L 33/06 (2010.01); H01L 33/20 (2010.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 21/0254 (2013.01); H01L 21/0259 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02513 (2013.01); H01L 33/20 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 33/007 (2013.01); H01L 33/025 (2013.01);
Abstract

A semiconductor light emitting element includes: a pit formation layer formed on the first semiconductor layer and having a pyramidal pit; and an active layer formed on the pit formation layer and having a flat portion and an embedded portion which is formed so as to embed the pit. The active layer has a multi-quantum well structure having a well layer and a barrier layer laminated alternately in which each well layer and each barrier layer lie one upon another. The flat portion has a flat well portion corresponding to the well layer. The embedded portion has an embedded well portion corresponding to the well layer. The embedded well portion has a ring portion which is formed in an interface with the flat well portion so as to surround the threading dislocation. The ring portion has a band gap smaller than that of the flat well portion.


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