The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jan. 27, 2016
Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;
Koji Okuno, Kiyosu, JP;
TOYODA GOSEI CO., LTD., Kiyosu-Shi, Aichi-Ken, JP;
Abstract
There is provided a method for producing a Group III nitride semiconductor light-emitting device having a low driving voltage, which is realized by steeply increasing the concentration of Mg within a p-type semiconductor layer. This production method includes the steps of forming an n-type contact layer, forming an n-side high electrostatic breakdown voltage layer, forming an n-side superlattice layer, forming a light-emitting layer, forming a p-type cladding layer, forming a p-type intermediate layer, and forming a p-type contact layer. The step of forming the p-type cladding layer includes supplying a dopant gas without supplying a first raw material gas (TMG) containing a Group III element during a first period TA1 and supplying the first raw material gas (TMG) and the dopant gas during a second period TA2 after the first period TA1 so as to grow a semiconductor layer.