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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496449 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Jul. 17, 2012

Method for manufacturing ci(g)s-based thin film comprising cu-se thin film using cu-se two-component nanoparticle flux, and ci(g)s-based thin film manufactured by the method

Applicants:

Ara Cho, Seoul, KR;

Sejin Ahn, Daejeon, KR;

Kyung-hoon Yoon, Daejeon, KR;

Jae-ho Yun, Daejeon, KR;

Jihye Gwak, Daejeon, KR;

Kee-shik Shin, Daejeon, KR;

Seoungkyu Ahn, Daejeon, KR;

Inventors:

Ara Cho, Seoul, KR;

SeJin Ahn, Daejeon, KR;

Kyung-Hoon Yoon, Daejeon, KR;

Jae-Ho Yun, Daejeon, KR;

Jihye Gwak, Daejeon, KR;

Kee-Shik Shin, Daejeon, KR;

SeoungKyu Ahn, Daejeon, KR;

Assignee:

Korea Institute of Energy Research, Daejeon, KR;

Attorneys:

Amanda M. Prose

Westman, Champlin & Koehler, P.A.

Primary Examiner:

Matthew Martin

Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/0749 (2012.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); H01L 31/0352 (2006.01);
U.S. Cl.
CPC ...
H01L 31/18 (2013.01); H01L 21/02422 (2013.01); H01L 21/02491 (2013.01); H01L 21/02568 (2013.01); H01L 21/02601 (2013.01); H01L 21/02614 (2013.01); H01L 21/02628 (2013.01); H01L 31/0322 (2013.01); H01L 31/035218 (2013.01); H01L 31/0749 (2013.01); Y02E 10/541 (2013.01);
Abstract

A method for manufacturing a CI(G)S-based thin film using a Cu—Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu—Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu—Se two-component nanoparticles by mixing the Cu—Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu—Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.

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