The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Feb. 24, 2014
Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-Fu, JP;
Koji Murayama, Nagaokakyo, JP;
Masanobu Nomura, Nagaokakyo, JP;
Yasushi Iwata, Nagaokakyo, JP;
Kanako Tomita, Nagaokakyo, JP;
MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;
Abstract
A solar cell that includes a negative electrode made of Al—Nd or the like formed on a substrate, an electron transport layer made of n-type Si or the like, a quantum dot arrangement layer made of graphene or the like, a quantum dot layer, a positive hole transport layer made of p-type Si or the like, and a positive electrode made of ITO or the like are sequentially formed on a surface of the negative electrode. Output electrodes are formed on the positive electrode so that at least a part of the surface of the positive electrode is exposed. The quantum dot layer is constructed such that quantum dots of Si cluster particles are three-dimensionally periodically arranged. The Si cluster particles have an average particle size of 3 nm or less, and the interparticle distance between the Si cluster particles is 1 nm or less.