The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Oct. 10, 2013
Rohm Co., Ltd., Kyoto, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Takuji Maekawa, Kyoto, JP;
Shigeru Niki, Tsukuba, JP;
Shogo Ishizuka, Tsukuba, JP;
Hajime Shibata, Tsukuba, JP;
ROHM CO., LTD., Kyoto, JP;
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, Tokyo, JP;
Abstract
The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer provided on the lower electrode layer as covering the lower electrode layer, and a transparent electrode layer provided on the compound semiconductor layer, wherein the compound semiconductor layer has a maximum Ga content variation of not less than 5% as measured in a layer thickness direction, and a maximum In content variation of not less than 6% as measured in the layer thickness direction.