The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Feb. 04, 2014
Imec, Leuven, BE;
Maria Recaman Payo, Leuven, BE;
Niels Posthuma, Leuven, BE;
IMEC, Leuven, BE;
Abstract
The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in fabricating photovoltaic devices. In one aspect, a method of forming a pattern of different doped regions at the same side of a semiconductor substrate comprises providing a patterned doped layer on a surface of the semiconductor substrate at predetermined locations where at least one first doped region is to be formed. The method additionally includes selectively growing at least one second doped region epitaxially at the same side of the semiconductor substrate using the patterned doped layer as an epitaxial growth mask. Furthermore, selectively growing comprises driving dopants from the patterned doped layer into the semiconductor substrate to form the first doped region at the predetermined locations.