The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Sep. 17, 2010
Applicant:
Henning Nagel, Alzenau, DE;
Inventor:
Henning Nagel, Alzenau, DE;
Assignee:
SCHOTT SOLAR AG, Mainz, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0747 (2012.01); H01L 31/02 (2006.01); H01L 31/0216 (2014.01); H01L 31/0224 (2006.01); H01L 31/048 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/02021 (2013.01); H01L 31/02167 (2013.01); H01L 31/02168 (2013.01); H01L 31/022466 (2013.01); H01L 31/048 (2013.01); H01L 31/068 (2013.01); Y02E 10/547 (2013.01);
Abstract
A crystalline solar cell is provided that includes a front-sided n-doped area and a rear-sided p-doped area, a front-sided contact, a rear-sided contact and at least one front-sided first layer made from SiN. In order to reduce degradation of the parallel resistance, a second layer made of at least one material selected from the group SiN, SiOx, Al2Ox, SiOxNy: Hz, a-Si:H, TiOx or containing said type of material is disposed between the first layer and the n-doped area and is then doped for forming imperfections.