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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496383 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Jun. 18, 2014

Semiconductor device and method of forming the same

Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventors:

Kiyonori Oyu, Tokyo, JP;

Koji Taniguchi, Tokyo, JP;

Koji Hamada, Tokyo, JP;

Hiroaki Taketani, Tokyo, JP;

Assignee:

Longitude Semiconductor S.a.r.l., Luxembourg, LU;

Attorney:
Primary Examiner:

Ermias Woldegeorgis

Assistant Examiner:

John Bodnar

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/108 (2006.01); H01L 27/02 (2006.01); H01L 49/02 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 27/0207 (2013.01); H01L 27/108 (2013.01); H01L 27/10817 (2013.01); H01L 27/10876 (2013.01); H01L 28/91 (2013.01); H01L 29/1037 (2013.01); H01L 29/4236 (2013.01); H01L 29/66621 (2013.01); H01L 29/785 (2013.01);
Abstract

A semiconductor device may include, but is not limited to, a semiconductor substrate having a first gate groove; a first fin structure underneath the first gate groove; a first diffusion region in the semiconductor substrate, the first diffusion region covering an upper portion of a first side of the first gate groove; and a second diffusion region in the semiconductor substrate. The second diffusion region covers a second side of the first gate groove. The second diffusion region has a bottom which is deeper than a top of the first fin structure.

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