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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496375 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Aug. 21, 2015

Method for manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Atsuo Isobe, Kanagawa, JP;

Kunio Hosoya, Kanagawa, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Zandra Smith

Assistant Examiner:

Andre' C Stevenson

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/441 (2006.01); H01L 29/51 (2006.01); H01L 29/417 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/383 (2006.01); H01L 21/425 (2006.01); H01L 21/4757 (2006.01); H01L 29/24 (2006.01); H01L 29/49 (2006.01); H01L 27/108 (2006.01); H01L 27/11 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/0237 (2013.01); H01L 21/02178 (2013.01); H01L 21/02244 (2013.01); H01L 21/02565 (2013.01); H01L 21/383 (2013.01); H01L 21/425 (2013.01); H01L 21/441 (2013.01); H01L 21/47573 (2013.01); H01L 27/1225 (2013.01); H01L 29/24 (2013.01); H01L 29/41733 (2013.01); H01L 29/495 (2013.01); H01L 29/4908 (2013.01); H01L 29/517 (2013.01); H01L 29/7869 (2013.01); H01L 27/10873 (2013.01); H01L 27/1108 (2013.01); H01L 27/1156 (2013.01);
Abstract

To improve productivity of a transistor that includes an oxide semiconductor and has good electrical characteristics. In a top-gate transistor including a gate insulating film and a gate electrode over an oxide semiconductor film, a metal film is formed over the oxide semiconductor film, oxygen is added to the metal film to form a metal oxide film, and the metal oxide film is used as a gate insulating film. After an oxide insulating film is formed over the oxide semiconductor film, a metal film may be formed over the oxide insulating film. Oxygen is added to the metal film to form a metal oxide film and added also to the oxide semiconductor film or the oxide insulating film.

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