The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jan. 13, 2014
Shenzhen China Star Optoelectronics Technology Co., Ltd., Shenzhen, Guangdong, CN;
Zhe Hu, Shenzhen, CN;
Yuting Chen, Shenzhen, CN;
Runze Zhan, Shenzhen, CN;
Chengyuan Dong, Shenzhen, CN;
Chenglung Chiang, Shenzhen, CN;
Polin Chen, Shenzhen, CN;
Tzuchieh Lai, Shenzhen, CN;
Shenzhen China Star Optoelectronics Technology Co., Ltd, Shenzhen, Guangdong, CN;
Abstract
The present invention provides a method for manufacturing a thin-film transistor substrate, which has a simple process and achieves an excellent contact interface between an oxide semiconductor layer and source/drain terminals through successive film forming so as to prevent crowding effect resulting from excessive contact resistance. Further, by using a metallic material containing tantalum to make the source/drain terminals and applying an etchant solution containing hydrogen peroxide to carry out etching in an etching process of the source/drain terminals, damages of the oxide semiconductor layer caused by traditional etchant solution can be prevented and quality of the thin-film transistor substrate can be enhanced. Further, it is not necessary to additionally form an etch stopper layer to protect the oxide semiconductor layer in the back channel so as to achieve relatively high channel width/length ratio (W/L), and also simplify the structure of the thin-film transistor substrate, simplify the manufacturing process, reduce the manufacturing cost, and enhance yield rate.