The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Mar. 22, 2012
Applicants:

Brian K. Kirkpatrick, Allen, TX (US);

Amitabh Jain, Allen, TX (US);

Inventors:

Brian K. Kirkpatrick, Allen, TX (US);

Amitabh Jain, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 29/41775 (2013.01); H01L 29/6653 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/778 (2013.01); H01L 29/7833 (2013.01); H01L 21/823864 (2013.01);
Abstract

A method of fabricating an integrated circuit includes depositing a first dielectric material onto a semiconductor surface of a substrate having a gate stack thereon including a gate electrode on a gate dielectric. The first dielectric material is etched to form sidewall spacers on sidewalls of the gate stack. A top surface of the first dielectric material is chemically converted to a second dielectric material by adding at least one element to provide surface converted sidewall spacers. The second dielectric material is chemically bonded across a transition region to the first dielectric material.


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