The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Sep. 02, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, Tokyo, JP;

Inventors:

Tomoko Matsudai, Shibuya Tokyo, JP;

Norio Yasuhara, Kawasaki Kanagawa, JP;

Tsuneo Ogura, Kamakura Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/36 (2006.01); H01L 29/739 (2006.01);
U.S. Cl.
CPC ...
H01L 29/36 (2013.01); H01L 29/7395 (2013.01);
Abstract

According to one embodiment, a semiconductor device includes: a first semiconductor region; a second semiconductor region on the first semiconductor region; a third semiconductor region on the second semiconductor region; an fourth insulating film on the second semiconductor region and the third semiconductor region; a first electrode under the first semiconductor region; a second electrode on the fourth insulating film; a plurality of first contact regions extending in a first direction from the first electrode toward the second electrode in the fourth insulating film, and the plurality of first contact regions electrically connecting the third semiconductor region to the second electrode; a plurality of second contact regions extending in the first direction in the fourth insulating film, and one of the plurality of second contact regions between adjacent ones of the first contact regions; and a third electrode in the second semiconductor region via a first insulating film.


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