The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Dec. 01, 2015
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Katsuhiko Takeuchi, Kanagawa, JP;

Satoshi Taniguchi, Kanagawa, JP;

Assignee:

SONY CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H01L 29/10 (2006.01); H01L 29/205 (2006.01); H01L 29/778 (2006.01); H04W 52/02 (2009.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H04B 1/48 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1029 (2013.01); H01L 29/0692 (2013.01); H01L 29/205 (2013.01); H01L 29/41758 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H04B 1/44 (2013.01); H04B 1/48 (2013.01); H04W 52/0229 (2013.01);
Abstract

A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that is provided on a top surface side of the laminated body, wherein the laminated body includes a first low-resistance region that is provided on the top surface side of the laminated body, the first low-resistance region facing the at least one gate electrode, and a second low-resistance region that is provided externally of the first low resistance region on the top surface side of the laminated body, the second low-resistance region being continuous with the first low-resistance region.


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