The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Oct. 14, 2015
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Kwang Yeon Jun, Bucheon-si, KR;

Chang Yong Choi, Seoul, KR;

Hyuk Woo, Incheon-si, KR;

Moon Soo Cho, Seoul, KR;

Soon Tak Kwon, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/265 (2013.01); H01L 21/26513 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01);
Abstract

There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type semiconductor region disposed in a substrate, two or more p-type semiconductor regions disposed adjacent to the n-type semiconductor region alternately in a direction parallel to a surface of the substrate, a p-type body region disposed on at least one of the p-type semiconductor regions, and a source region disposed in the p-type body region, and an n-type ion implantation region is formed along a lower end of the n-type semiconductor region and lower ends of the p-type semiconductor regions.


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