Coa woled structure and manufacturing method thereof

Abstract

The present invention provides a COA WOLED structure and a manufacturing method thereof. The structure includes red/green/blue sub pixel zones and each sub pixel zone includes a substrate (), a gate terminal (), a gate insulation layer (), an oxide semiconductor layer (), an etch stop layer (), source/drain terminals (), a passivation protection layer (), a red/green/blue photoresist layer (), a planarization layer (), a semi-reflection layer (), an anode layer (), a pixel definition layer (), a photo spacer (), a white light emission layer (), a cathode layer (), and a packaging lid (). The present invention arranges a semi-transparent metal layer formed on a planarization layer to serve as a semi-reflection layer to use micro cavity resonance between an anode and a cathode and controls the thicknesses of the anode layers corresponding to the red/green/blue photoresist layers so as to obtain optimum micro cavity lengths for different colors of light thereby enhancing the light emission efficiency of the three primary colors of red/green/blue transmitting through a color filter and thus effectively improving the brightness of a COA WOLED device.