The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Aug. 19, 2010
Applicants:

Stephen R. Forrest, Ann Arbor, MI (US);

Xin Xu, Ann Arbor, MI (US);

Christopher Kyle Renshaw, Ann Arbor, MI (US);

Inventors:

Stephen R. Forrest, Ann Arbor, MI (US);

Xin Xu, Ann Arbor, MI (US);

Christopher Kyle Renshaw, Ann Arbor, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/44 (2006.01); H01L 27/30 (2006.01); B82Y 10/00 (2011.01); H01L 27/28 (2006.01); H01L 51/10 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 27/307 (2013.01); B82Y 10/00 (2013.01); H01L 27/283 (2013.01); H01L 51/105 (2013.01); H01L 51/0046 (2013.01); H01L 51/0078 (2013.01); H01L 51/0541 (2013.01); H01L 51/424 (2013.01);
Abstract

Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the device. In an embodiment, an organic transistor includes a drain electrode and a source electrode disposed over a first region of a substrate, a transition metal oxide layer disposed over and in direct physical contact with the drain electrode and the source electrode, an organic preferentially hole conducting channel layer disposed over the metal oxide and between the drain electrode and the source electrode, and a gate electrode disposed over the channel.


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