The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Oct. 27, 2014
Applicant:

Sony Corporation, Tokyo, JP;

Inventor:

Yoshiaki Kikuchi, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/146 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14687 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14614 (2013.01); H01L 27/14616 (2013.01); H01L 27/14623 (2013.01); H01L 27/14638 (2013.01); H01L 27/14641 (2013.01); H01L 27/14689 (2013.01); H01L 29/42392 (2013.01);
Abstract

A solid-state imaging device includes two-dimensionally arranged pixels, and each pixel includes a photoelectric conversion element configured to generate charges according to a light amount of incident light and accumulate the charges therein; and at least one of an amplification transistor configured to amplify a voltage corresponding to the charges accumulated in the photoelectric conversion element, a readout transistor configured to read a signal of the voltage amplified by the amplification transistor, and a reset transistor configured to reset the charges accumulated in the photoelectric conversion element, a channel region of each transistor being formed in a direction perpendicular to a substrate.


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