The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Mar. 11, 2013
Applicant:

Sony Corporation, Tokyo, JP;

Inventors:

Tetsuji Yamaguchi, Kanagawa, JP;

Yuko Ohgishi, Tokyo, JP;

Takashi Ando, Kanagawa, JP;

Harumi Ikeda, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14636 (2013.01); H01L 27/1461 (2013.01); H01L 27/1462 (2013.01); H01L 27/1464 (2013.01); H01L 27/14625 (2013.01); H01L 27/14629 (2013.01); H01L 27/14683 (2013.01); H01L 27/14643 (2013.01);
Abstract

Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging devicehaving a light-receiving portionto photoelectrically convert incident light is characterized by including a film, which is disposed on a light-receiving surfaceof the above-described light-receiving portionand which lowers an interface state, and a film, which is disposed on the above-described filmto lower the interface state and which has a negative fixed charge, wherein a hole accumulation layeris disposed on the light-receiving surfaceside of the light-receiving portion


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