The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Dec. 12, 2013
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;

Inventor:

Qiyu Shen, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1368 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1285 (2013.01); G02F 1/1368 (2013.01); H01L 27/1222 (2013.01); H01L 27/1288 (2013.01); H01L 29/78675 (2013.01);
Abstract

A method for manufacturing an array substrate comprising: using a mask plate (), and controlling exposure energy to obtain a first exposure feature size, so as to form a gate metal layer on the array substrate; and using the mask plate again, and controlling exposure energy to obtain a second exposure feature size larger than a size of the gate metal layer, so as to form low doped regions () located at opposite sides of the gate metal layer and having a same length. The method can form the two low doped regions of the LTPS-TFT having the same length and guarantee the ability of the LTPS-TFT to suppress the leakage current.


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