The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jul. 29, 2013
Applicant:

Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;

Inventors:

Yasuhiro Kohara, Osaka, JP;

Mitsunori Harada, Osaka, JP;

Hijiri Nakahara, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1362 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/136227 (2013.01); H01L 27/1225 (2013.01); H01L 27/1288 (2013.01); H01L 21/7685 (2013.01);
Abstract

This semiconductor device (A) includes: a transparent conductive layer (); an insulating layer () which is formed to cover the transparent conductive layer () and which has a hole () that overlaps at least partially with the transparent conductive layer (); a metal layer () formed on the insulating layer () and inside the hole (); and a contact portion () connecting the transparent conductive layer () and the metal layer () together. In the contact portion (), a refractory metal nitride layer () is arranged between the transparent conductive layer () and a portion of the metal layer () which is located inside the hole (). The refractory metal nitride layer () is in contact with the upper surface of the transparent conductive layer ().


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