The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Nov. 13, 2014
Applicant:

Cypress Semiconductor Corporation, San Jose, CA (US);

Inventors:

Hiroaki Kouketsu, Fukushima-ken, JP;

Masaya Hosaka, Fukushima-ken, JP;

Assignee:

MONTEREY RESEARCH, LLC, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/266 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01); H01L 29/792 (2006.01); H01L 27/105 (2006.01); H01L 21/311 (2006.01); H01L 29/45 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11563 (2013.01); H01L 21/266 (2013.01); H01L 21/28282 (2013.01); H01L 21/31111 (2013.01); H01L 27/105 (2013.01); H01L 27/11568 (2013.01); H01L 27/11573 (2013.01); H01L 29/45 (2013.01); H01L 29/513 (2013.01); H01L 29/518 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, an ONO (oxide/nitride/oxide) film provided on the semiconductor substrate, a control gate provided on the ONO film, a first low-resistance layer, and a second low-resistance layer in contact with the first low-resistance layer, the second low-resistance layer having a sheet resistance lower than the first low-resistance layer. With this configuration, it is possible to downsize the memory cell and provide a fabrication method of the semiconductor device in which the peripheral circuit can be fabricated with simple fabrication processes.


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