The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jan. 13, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyung-Eun Kim, Seoul, KR;
Young-Seung Cho, Yongin-si, KR;
So-Hyun Park, Seoul, KR;
Sang-Jo Yun, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing a semiconductor device is provided. The method includes sequentially forming a mold layer and a preliminary support layer on a substrate, forming a plurality of lower electrodes through the preliminary support layer and the mold layer, removing a portion of the preliminary support layer between the plurality of lower electrodes to form a preliminary support layer pattern having an open area exposing a top surface of the mold layer, removing the mold layer to form a void between the substrate and the preliminary support layer pattern, filling the open area and the void with a sacrificial layer, and replacing the preliminary support layer pattern with a support pattern.