The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Sep. 24, 2014
Applicants:
Miroslav Micovic, Thousand Oaks, CA (US);
Alexandros D. Margomenos, Pasadena, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Andrea Corrion, Oak Park, CA (US);
Inventors:
Miroslav Micovic, Thousand Oaks, CA (US);
Alexandros D. Margomenos, Pasadena, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Andrea Corrion, Oak Park, CA (US);
Assignee:
HRL Laboratories, LLC, Malibu, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/373 (2006.01); H01L 23/34 (2006.01); H01L 21/306 (2006.01); H01L 23/00 (2006.01); H01L 29/80 (2006.01);
U.S. Cl.
CPC ...
H01L 23/34 (2013.01); H01L 21/30617 (2013.01); H01L 21/30625 (2013.01); H01L 24/27 (2013.01); H01L 2924/01006 (2013.01);
Abstract
Apparatus and methods are provided for heat removal and spreading from a field effect transistor (FET) including a substrate, a first source, a first gate, and a drain on the substrate, and a poly-diamond dielectric thermally coupled to the first gate wherein the poly-diamond dielectric facilitates heat removal from a top of the FET.