The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Nov. 12, 2014
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventor:

Yu-Cheng Tung, Kaohsiung, TW;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract

A semiconductor device comprises a substrate, a semiconductor fin, a first isolation structure and a first dummy structure. The semiconductor fin comprises a first sub-fin and a second sub-fin protruding from a surface of the substrate. The first isolation structure is disposed in the semiconductor fin used for electrically isolating the first sub-fin and the second sub-fin. The first dummy structure is disposed on the first isolation structure and laterally extends beyond the first isolation structure along a long axis of the semiconductor fin, so as to partially overlap a portion of the first sub-fin and a portion of the second sub-fin.


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