The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jul. 02, 2012
Applicants:

Hideya Horiuchi, Nagaokakyo, JP;

Satoru Hachinohe, Nagaokakyo, JP;

Junichi Koshino, Nagaokakyo, JP;

Inventors:

Hideya Horiuchi, Nagaokakyo, JP;

Satoru Hachinohe, Nagaokakyo, JP;

Junichi Koshino, Nagaokakyo, JP;

Assignee:

MURATA MANUFACTURING CO., LTD., Nagaokakyo-Shi, Kyoto-Fu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); G02B 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67098 (2013.01); G02B 1/02 (2013.01); H01L 21/67092 (2013.01); H01L 21/67103 (2013.01);
Abstract

A semiconductor crystal body processing method includes providing a semiconductor crystal body, sandwiching the semiconductor crystal body between a pair of conductive pressurizing tools, applying a pulse-like current between the pair of pressurizing tools to heat the semiconductor crystal body to a target temperature equal to or higher than a temperature at which the semiconductor crystal body is plastically deformed by pressurization and lower than its melting point, and applying pressure and a pulse-like current between the pair of pressurizing tools to thereby maintain the temperature of the semiconductor crystal body at the target temperature and mold the semiconductor crystal body into a target shape by plastic deformation.


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