The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jun. 28, 2012
Masaki Koyama, Atsugi, JP;
Kosei Nei, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Suguru Hondo, Atsugi, JP;
Toru Hasegawa, Atsugi, JP;
Masaki Koyama, Atsugi, JP;
Kosei Nei, Atsugi, JP;
Akihisa Shimomura, Atsugi, JP;
Suguru Hondo, Atsugi, JP;
Toru Hasegawa, Atsugi, JP;
SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Kanagawa-ken, JP;
Abstract
In an oxide semiconductor film formed over an insulating surface, an amorphous region remains in the vicinity of the interface with the base, which is thought to cause a variation in the characteristics of a transistor and the like. A base surface or film touching the oxide semiconductor film is formed of a material having a melting point higher than that of a material used for the oxide semiconductor film. Accordingly, a crystalline region is allowed to exist in the vicinity of the interface with the base surface or film touching the oxide semiconductor film. An insulating metal oxide is used for the base surface or film touching the oxide semiconductor film. The metal oxide used here is an aluminum oxide, gallium oxide, or the like that is a material belonging to the same group as the material of the oxide semiconductor film.