The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jul. 14, 2015
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
Ki Myung Kyung, Icheon-si, KR;
Assignee:
SK HYNIX INC., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/12 (2006.01); G11C 7/18 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 7/12 (2013.01); G11C 7/18 (2013.01); G11C 13/0002 (2013.01); G11C 13/0023 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 13/0061 (2013.01); G11C 8/08 (2013.01); G11C 2213/79 (2013.01);
Abstract
A variable resistive memory device may include a memory region and controller. The memory region may include a plurality of unit memory cells each electrically connected between a word line and a bit line. The controller may perform a driving operation of the word line in response to a read command. The controller may perform a driving operation of a bit line to output cell data through the bit line substantially simultaneously with the driving operation of the word line. Each of the unit memory cell may include a variable resistive material.