The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Oct. 21, 2014
Applicant:

Iii Holdings 1, Llc, Wilmington, DE (US);

Inventor:

Krishnakumar Mani, San Jose, CA (US);

Assignee:

III HOLDINGS 1, LLC, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 29/872 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01); G11C 11/36 (2006.01); G11C 11/16 (2006.01); G11C 11/14 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/1673 (2013.01); G11C 11/14 (2013.01); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); G11C 11/36 (2013.01); H01L 27/222 (2013.01); H01L 27/224 (2013.01); H01L 27/228 (2013.01); H01L 29/872 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

Memory cell comprising two conductors, with a serially connected magnetic storage element and a Schottky diode between the two conductors. The Schottky diode provides a unidirectional conductive path between the two conductors and through the element. The Schottky diode is formed between a metal layer in one of the two conductors and a processed junction layer. Methods for process and for operation of the memory cell are also disclosed. The memory cell using the Schottky diode can be designed for high speed operation and with high density of integration. Advantageously, the junction layer can also be used as a hard mask for defining the individual magnetic storage element in the memory cell. The memory cell is particularly useful for magnetic random access memory (MRAM) circuits.


Find Patent Forward Citations

Loading…