The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Nov. 19, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Choong-Jae Lee, Hwaseong-si, KR;
Kyoung-Mok Son, Suwon-si, KR;
Sang-Gi Ko, Seongnam-si, KR;
Si-Woo Kim, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/403 (2006.01); G11C 8/16 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 8/16 (2013.01); G11C 11/403 (2013.01); H01L 27/10805 (2013.01); H01L 27/1156 (2013.01);
Abstract
A memory cell includes a metal oxide semiconductor (MOS) capacitor including a gate coupled to a storage node and an electrode coupled to a synchronization control line. The MOS capacitor adds a coupling voltage to the gate based on a change in voltage on the synchronization control line. The coupling voltage may maintain the storage node within a predetermined range.