The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Sep. 09, 2013
Lg Chem, Ltd., Seoul, KR;
Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;
Yang Kyoo Han, Seoul, KR;
Je Gwon Lee, Daejeon, KR;
Hyun Jin Lee, Daejeon, KR;
No Ma Kim, Daejeon, KR;
Sung Soo Yoon, Daejeon, KR;
Eun Ji Shin, Daejeon, KR;
Yeon Sik Jung, Daejeon, KR;
LG CHEM, LTD., Seoul, KR;
IUCF-HYU (Industry-University Cooperation Foundation Hanyang University), Seoul, KR;
Abstract
The present invention relates to a method for forming a silicon oxide nanopattern, in which the method can be used to easily form a nanodot or nanohole-type nanopattern, and a metal nanopattern formed by using the same can be properly applied to a next-generation magnetic recording medium for storage information, etc., a method for forming a metal nanopattern, and a magnetic recording medium for information storage using the same. The method for forming a silicon oxide nanopattern includes the steps of forming a block copolymer thin film including specific hard segments and soft segments containing a (meth)acrylate-based repeating unit on silicon oxide of a substrate; conducting orientation of the thin film; selectively removing the soft segments from the block copolymer thin film; and conducting reactive ion etching of silicon oxide using the block copolymer thin film from which the soft segments are removed, as a mask to form a silicon oxide nanodot or nanohole pattern.