The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Apr. 29, 2014
Applicant:
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Inventor:
Bing-Heng Lee, New Taipei, TW;
Assignee:
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/122 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/122 (2013.01); G02B 2006/1204 (2013.01); G02B 2006/1218 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12176 (2013.01); G02B 2006/12183 (2013.01); G02B 2006/12188 (2013.01);
Abstract
In a method, a substrate is provided and is implanted with argon ions to form an argon ion modified layer. Two slots are defined and extend through the argon ion modified layer to form a ridge. The substrate is etched to change the ridge into a beveled ridge. An etching rate of the argon ion modified layer is higher than that of the substrate. The beveled ridge is diffused with metal to form a beveled ridge waveguide.