The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jul. 29, 2013
Applicants:
Faquir Chand Jain, Storrs, CT (US);
John Zeller, Albany, NY (US);
Inventors:
Faquir Chand Jain, Storrs, CT (US);
John Zeller, Albany, NY (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/10 (2006.01); G02F 1/035 (2006.01); G02F 1/017 (2006.01); B82Y 20/00 (2011.01);
U.S. Cl.
CPC ...
G02B 6/10 (2013.01); G02F 1/01708 (2013.01); G02F 1/035 (2013.01); B82Y 20/00 (2013.01); G02F 2001/01791 (2013.01); Y10S 977/774 (2013.01); Y10S 977/932 (2013.01);
Abstract
Novel use of a cladded quantum dot array layer serving as a waveguide channel by sandwiching it between two cladding layers comprised of lower index of refraction materials is described to form Si nanophotonic devices and integrated circuits. The photonic device structure is compatible with Si nanoelectronics using conventional, quantum dot gate (QDG), and quantum dot channel (QDC) FET based logic, memories, and other integrated circuits.