The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jun. 16, 2011
Applicants:

Mitsuhito Mase, Hamamatsu, JP;

Takashi Suzuki, Hamamatsu, JP;

Inventors:

Mitsuhito Mase, Hamamatsu, JP;

Takashi Suzuki, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu-shi, Shizuoka, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01C 3/08 (2006.01); G01S 17/89 (2006.01); G01S 7/486 (2006.01);
U.S. Cl.
CPC ...
G01S 17/89 (2013.01); G01S 7/4863 (2013.01);
Abstract

A light receiving region has a planar shape of a rectangular shape having a pair of long sides opposed to each other in a first direction and a pair of short sides opposed to each other in a second direction. First and second semiconductor regions are arranged as spatially separated from each other along the respective long sides. First and second gate electrodes are arranged each between the corresponding semiconductor region and the light receiving region. Third gate electrodes are arranged as spatially separated from each other between the first and second gate electrodes arranged along the long sides. Each of the third gate electrodes has a first electrode portion located between a third semiconductor region and the light receiving region, and a second electrode portion overlapping with the light receiving region and having a width in the second direction smaller than that of the first electrode portion.


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