The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Oct. 16, 2012
The University of Utah Research Foundation, Salt Lake City, UT (US);
Faisal Khan, Salt Lake City, UT (US);
Most. Sultana Nasrin, Salt Lake City, UT (US);
University of Utah Research Foundation, Salt Lake City, UT (US);
Abstract
Systems, methods and devices which utilize Spread Spectrum Time Domain Reflectometry (SSTDR) techniques to measure degradation of electronic components are provided. Such measurements may be implemented while the components 'live' or otherwise functioning within an overall system. In one embodiment, monitoring a power converter in a high power system is accomplished. In this embodiment, degradation of components within the power converter (e.g. metal-oxide-semiconductor field-effect transistors (MOSFETs), capacitors, insulated-gate bipolar transistors (IGBTs), and the like) may be monitored by processing data from reflections of an SSTDR signal to determine changes in impedance, capacitance, or any other changes that may be characteristic of components degrading. For example, an aging MOSFET may experience an increase of drain to source resistance which adds additional resistance to a current path within a power converter. Such a change is able to be analyzed monitored upon processing the reflected test signals.