The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jun. 05, 2015
Applicants:

Patrice M. Parris, Phoenix, AZ (US);

Weize Chen, Phoenix, AZ (US);

Richard J. DE Souza, Chandler, AZ (US);

Jose Fernandez Villasenor, Tokyo, JP;

MD M. Hoque, Gilbert, AZ (US);

David E. Niewolny, Austin, TX (US);

Raymond M. Roop, Paradise Valley, AZ (US);

Inventors:

Patrice M. Parris, Phoenix, AZ (US);

Weize Chen, Phoenix, AZ (US);

Richard J. de Souza, Chandler, AZ (US);

Jose Fernandez Villasenor, Tokyo, JP;

Md M. Hoque, Gilbert, AZ (US);

David E. Niewolny, Austin, TX (US);

Raymond M. Roop, Paradise Valley, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 27/403 (2006.01); G01N 27/414 (2006.01); B01L 3/00 (2006.01); H01L 21/67 (2006.01); H01L 31/119 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
G01N 27/414 (2013.01); B01L 3/502715 (2013.01); H01L 21/67259 (2013.01); H01L 29/66431 (2013.01); B01L 2200/10 (2013.01); B01L 2200/12 (2013.01); B01L 2300/041 (2013.01); B01L 2300/0645 (2013.01); B01L 2400/0418 (2013.01); H01L 29/66462 (2013.01); H01L 31/119 (2013.01);
Abstract

Protected sensor field effect transistors (SFETs). The SFETs include a semiconductor substrate, a field effect transistor, and a sense electrode. The SFETs further include an analyte-receiving region that is supported by the semiconductor substrate, is in contact with the sense electrode, and is configured to receive an analyte fluid. The analyte-receiving region is at least partially enclosed. In some embodiments, the analyte-receiving region can be an enclosed analyte channel that extends between an analyte inlet and an analyte outlet. In these embodiments, the enclosed analyte channel extends such that the analyte inlet and the analyte outlet are spaced apart from the sense electrode. In some embodiments, the SFETs include a cover structure that at least partially encloses the analyte-receiving region and is formed from a cover material that is soluble within the analyte fluid. The methods include methods of manufacturing the SFETs.


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