The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Feb. 19, 2014
Applicant:
Technische Universiteit Eindhoven, Eindhoven, NL;
Inventors:
Simone Assali, Eindhoven, NL;
Ilaria Zardo, Eindhoven, NL;
Jozef Everardus Maria Haverkort, Vught, NL;
Erik Petrus Antonius Maria Bakkers, Heeze, NL;
Assignee:
Technische Universiteit Eindhoven, Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 23/04 (2006.01); C30B 11/12 (2006.01); C30B 23/00 (2006.01); C30B 25/00 (2006.01); C30B 29/40 (2006.01); C30B 29/44 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
C30B 11/12 (2013.01); C30B 23/007 (2013.01); C30B 25/005 (2013.01); C30B 29/40 (2013.01); C30B 29/44 (2013.01); C30B 29/605 (2013.01);
Abstract
Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.