The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Mar. 16, 2011
Applicant:

Tokuyuki Nakayama, Ichikawa, JP;

Inventor:

Tokuyuki Nakayama, Ichikawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01G 15/00 (2006.01); H01B 1/08 (2006.01); C23C 14/08 (2006.01); C04B 35/01 (2006.01); C04B 37/02 (2006.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
C23C 14/08 (2013.01); C01G 15/00 (2013.01); C01G 15/006 (2013.01); C04B 35/01 (2013.01); C04B 37/026 (2013.01); C23C 14/086 (2013.01); C23C 14/3414 (2013.01); C01P 2002/50 (2013.01); C04B 2235/3229 (2013.01); C04B 2235/3232 (2013.01); C04B 2235/3244 (2013.01); C04B 2235/3284 (2013.01); C04B 2235/3293 (2013.01); C04B 2235/5436 (2013.01); C04B 2235/5445 (2013.01); C04B 2235/5472 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6585 (2013.01); C04B 2235/6586 (2013.01); C04B 2235/77 (2013.01); C04B 2235/783 (2013.01); C04B 2235/785 (2013.01); C04B 2235/786 (2013.01); C04B 2235/80 (2013.01); C04B 2237/12 (2013.01); C04B 2237/34 (2013.01); C04B 2237/407 (2013.01); Y10T 428/24355 (2015.01);
Abstract

A crystalline transparent conductive film containing indium oxide as a main component, and cerium, exhibiting low resistance derived from high refractive index and high carrier electron mobility, as well as small surface roughness, which is obtained by film-formation using an ion plating method. In the film, cerium content is 0.3 to 9% by atom, as an atomic number ratio of Ce/(In+Ce); film-formation is made using an ion plating method; and arithmetic average height (Ra) is 1.0 nm or lower. Also the film can contain one or more of titanium, zirconium, hafnium, molybdenum and tungsten, at a content of 1% by atom or lower, as an atomic number ratio of M/(In+Ce+M).


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