The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Dec. 22, 2014
Invisage Technologies, Inc., Menlo Park, CA (US);
Edward Hartley Sargent, Toronto, CA;
Rajsapan Jain, Menlo Park, CA (US);
Igor Constantin Ivanov, Danville, CA (US);
Michael R. Malone, San Jose, CA (US);
Michael Charles Brading, Danville, CA (US);
Hui Tian, Cupertino, CA (US);
Pierre Henri Rene Della Nave, Mountain View, CA (US);
Jess Jan Young Lee, Woodside, CA (US);
InVisage Technologies, Inc., Menlo Park, CA (US);
Abstract
In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.