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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9490429 B1

PDFFull Text
Date of Patent:
Nov. 08, 2016

Filed:

Sep. 21, 2015

Nonvolatile memory device and method for manufacturing same

Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Yoshitaka Sasago, Tachikawa, JP;

Masaharu Kinoshita, Tsukuba, JP;

Mitsuharu Tai, Matsudo, JP;

Akio Shima, Hino, JP;

Kenzo Kurotsuchi, Kodaira, JP;

Takashi Kobayashi, Higashimurayama, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Matthew Reames

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/06 (2006.01); H01L 27/102 (2006.01); H01L 29/792 (2006.01); H01L 27/24 (2006.01); H01L 27/115 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1608 (2013.01); H01L 27/0688 (2013.01); H01L 27/1021 (2013.01); H01L 27/249 (2013.01); H01L 27/2409 (2013.01); H01L 27/2454 (2013.01); H01L 27/2481 (2013.01); H01L 29/7926 (2013.01); H01L 45/04 (2013.01); H01L 45/16 (2013.01); G11C 13/0004 (2013.01); G11C 2213/75 (2013.01); H01L 27/11578 (2013.01); H01L 27/11582 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01);
Abstract

When a thin channel semiconductor layer formed on a side wall of a stacked film in which insulating films and gate electrodes are alternately stacked together is removed on the stacked film, a contact resistance between a vertical transistor including the channel semiconductor layer and the gate electrode, and a bit line formed on the stacked film is prevented from rising. As its means, a conductive layer electrically connected to the channel semiconductor layer is disposed immediately above the stacked film.

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