The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jun. 20, 2013
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Changjiang Yan, Beijing, CN;
Jun Long, Beijing, CN;
Zongmin Tian, Beijing, CN;
Zhenyu Xie, Beijing, CN;
Xu Chen, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A thin film transistor, an amorphous silicon flat detection substrate and a manufacturing method are provided. The material for a source electrode and a drain electrode of the thin film transistor is a conductor converted from the material for the amorphous metal oxide active layer by depositing an insulating substance containing hydrogen ions not less than a preset value, which reduces the valence band level difference between the source and the drain electrodes and the active layer, realizes good lattice matching and improves electricity characteristics of the thin film transistor.