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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9490351 B1

PDFFull Text
Date of Patent:
Nov. 08, 2016

Filed:

Mar. 10, 2015

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;

Inventors:

Tatsuya Honda, Tochigi, JP;

Takatsugu Omata, Isehara, JP;

Yusuke Nonaka, Atsugi, JP;

Assignee:

Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;

Attorneys:

Robinson Intellectual Property Law Office

Eric J. Robinson

Primary Examiner:

Daniel Shook

Int. Cl.
CPC ...
H01L 21/34 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/44 (2006.01); H01L 21/4757 (2006.01); H01L 21/477 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); H01L 21/0214 (2013.01); H01L 21/02164 (2013.01); H01L 21/02238 (2013.01); H01L 21/02565 (2013.01); H01L 21/44 (2013.01); H01L 21/477 (2013.01); H01L 21/47573 (2013.01); H01L 29/045 (2013.01); H01L 29/24 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 21/02255 (2013.01);
Abstract

An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

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