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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9490328 B1

PDFFull Text
Date of Patent:
Nov. 08, 2016

Filed:

Jun. 06, 2013

Silicon carbide semiconductor device and manufacturing method of the same

Applicant:

Hitachi, Ltd., Tokyo, JP;

Inventors:

Naoki Tega, Tokyo, JP;

Keisuke Kobayashi, Tokyo, JP;

Koji Fujisaki, Tokyo, JP;

Takashi Takahama, Tokyo, JP;

Assignee:

HITACHI, LTD., Tokyo, JP;

Attorney:

Volpe and Koenig, P.C.

Primary Examiner:

Tu-Tu Ho

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/0465 (2013.01); H01L 29/0619 (2013.01); H01L 29/086 (2013.01); H01L 29/0865 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/0882 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/66068 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01); H01L 21/0485 (2013.01); H01L 29/7811 (2013.01);
Abstract

In order to provide a high-performance and reliable silicon carbide semiconductor device, in a silicon carbide semiconductor device including an n-type SiC epitaxial substrate, a p-type body layer, a p-type body layer potential fixing region and a nitrogen-introduced n-type first source region formed in the p-type body layer, an n-type second source region to which phosphorus which has a solid-solubility limit higher than that of nitrogen and is easily diffused is introduced is formed inside the nitrogen-introduced n-type first source region so as to be separated from both of the p-type body layer and the p-type body layer potential fixing region.

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