The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Jun. 07, 2013
Applicant:

Lawrence Livermore National Security, Llc, Livermore, CA (US);

Inventors:

Lars Voss, Livermore, CA (US);

Adam Conway, Livermore, CA (US);

Rebecca J. Nikolic, Oakland, CA (US);

Cedric Rocha Leao, Oakland, CA (US);

Qinghui Shao, Fremont, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 29/861 (2006.01); H01L 27/102 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0657 (2013.01); H01L 21/02107 (2013.01); H01L 27/1021 (2013.01); H01L 29/861 (2013.01);
Abstract

In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.


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