The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2016

Filed:

Oct. 19, 2011
Applicants:

Ilan Bloom, Haifa, IL;

Amichai Givant, Rosh-Ha'ayin, IL;

Boaz Eitan, Hofit, IL;

Inventors:

Ilan Bloom, Haifa, IL;

Amichai Givant, Rosh-Ha'ayin, IL;

Boaz Eitan, Hofit, IL;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 21/3205 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11568 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

A nitride read only memory (NROM) array includes a silicon substrate having trenches therein, a plurality of polysilicon bit lines deposited in the trenches and connecting columns of memory cells, a layer of (oxide nitride oxide) ONO at least within the memory cells and a plurality of polysilicon word lines to connect rows of the memory cells. An NROM array with a virtual ground architecture includes a plurality of bit lines to connect columns of NROM memory cells, a layer of ONO at least within the memory cells and a plurality of word lines to connect rows of the NROM memory cells, wherein a distance between word lines is at least twice the width of the word lines.


Find Patent Forward Citations

Loading…