The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Feb. 25, 2015
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Kun Peng, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 27/105 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/28273 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/1052 (2013.01); H01L 29/42324 (2013.01); H01L 29/6656 (2013.01); H01L 29/66825 (2013.01);
Abstract
A semi-floating gate transistor structure includes a substrate, a first N-well region and a second N-well region separated from each other in the substrate, and a gate oxide layer on the substrate. The gate oxide layer includes a separation groove disposed on the first N-well region. The semi-floating gate transistor structure further includes a P-type doped floating gate having a first portion filling the separation groove and a second portion integrally formed on the first portion. The first portion of the P-type doped floating gate and the first N-well region form a pn-junction diode.