The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Dec. 18, 2014
Globalfoundries Inc., Grand Cayman, KY;
Norbert Arnold, Hopewell Junction, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
After forming a recessed conductive material portion over a deep trench capacitor located in a lower portion of a deep trench embedded in a substrate, a hard mask layer is formed over a top semiconductor layer of the substrate and the recessed conductive material portion such that the hard mask layer completely fills the deep trench. Next, the hard mask layer, the top semiconductor layer and the recessed conductive material portion are patterned to form a laterally contacting pair of a semiconductor fin and a conductive strap structure over the deep trench capacitor as well as a dielectric cap embedded in the deep trench. The dielectric cap vertically contacts a lower portion of the conductive strap structure and laterally surrounds a portion of an upper portion of the conductive strap structure that is not in contact with the semiconductor fin.