The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jul. 02, 2014
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventor:
Hyun Min Song, Chungcheongbuk-do, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/73 (2006.01); H01L 27/102 (2006.01); H01L 29/417 (2006.01); H01L 29/732 (2006.01); H01L 29/861 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 27/1023 (2013.01); H01L 29/0692 (2013.01); H01L 29/0804 (2013.01); H01L 29/41708 (2013.01); H01L 29/7302 (2013.01); H01L 29/732 (2013.01); H01L 29/861 (2013.01); H01L 29/0649 (2013.01);
Abstract
A diode-connected bipolar junction transistor includes a common collector region of a first conductivity, a common base region of a second conductivity disposed over the common collector region, and a plurality of emitter regions of the first conductivity disposed over the common base region, arranged to be spaced apart from each other, and arranged to have island shapes.
Song, Hyun. (2016). Diode-connected bipolar junction transistors and electronic circuits including the same (U.S. Patent No. 9490251). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9490251
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile