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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9490247 B1

PDFFull Text
Date of Patent:
Nov. 08, 2016

Filed:

Aug. 29, 2013

Semiconductor device and method for manufacturing same

Applicant:

Hitachi, Ltd., Chiyoda-ku, Tokyo, JP;

Inventors:

Hiroyuki Yoshimoto, Tokyo, JP;

Akio Shima, Tokyo, JP;

Digh Hisamoto, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:

Miles & Stockbridge P.C.

Primary Examiner:

Kevin M Picardat

Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 21/332 (2006.01); H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/36 (2006.01); H01L 21/8249 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0623 (2013.01); H01L 21/8249 (2013.01); H01L 29/0804 (2013.01); H01L 29/0821 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01);
Abstract

An IGBT () includes a pcollector region () and an ndrift region (), in which a first transistor (TR) and a second transistor (TR) are formed on the ndrift region (). In the ndrift region (), a p-type hole extraction region () is formed in contact with the second transistor (TR). When the IGBT () is in an on-state, electrons and holes flow through the first transistor (TR), but a current does not flow through the second transistor (TR). On the other hand, when the IGBT () is switched from the on-state to an off-state, holes flow through the first transistor (TR), and holes flow through the hole extraction region () and the second transistor (TR).

Find Patent Forward Citations

Yoshimoto, Hiroyuki. (2016). Semiconductor device and method for manufacturing same (U.S. Patent No. 9490247). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9490247

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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