The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Jun. 19, 2015
Qualcomm Incorporated, San Diego, CA (US);
Satyanarayana Sahu, San Diego, CA (US);
Renukprasad Shreedhar Hiremath, San Diego, CA (US);
Radhika Vinayak Guttal, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
A MOS device for reducing an antenna effect is provided. The MOS device includes a diode including a first nMOS transistor having a first nMOS transistor source, a first nMOS transistor drain, a first nMOS transistor gate, and an nMOS transistor body. The nMOS transistor body is coupled to a first voltage source and is an anode of the diode. The first nMOS transistor source, the first nMOS transistor drain, and the first nMOS transistor gate are coupled together and are a cathode of the diode. The MOS device further includes an interconnect extending between a driver output and a load input. The interconnect is coupled to the cathode of the diode. The interconnect may extend on one metal layer only between the driver output and the load input.