The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Sep. 14, 2012
Applicants:
Chang-woo OH, Suwon-si, KR;
Myung-gil Kang, Seoul, KR;
Young-chai Jung, Anyang-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract
An integrated circuit can include first and second FETs of a particular conductivity type on a substrate, wherein a first source/drain region of the first FET is closer to a center of a first channel region of the first FET than a second source/drain region of the second FET is to a center of a second channel region of the second FET.